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2SB982 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB982 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 isc Silicon PNP Power Transistor 2SB982 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= -7A; IB= -0.7A -2.0 V VBE(on) Base -Emitter On Voltage IC= -7A; VCE= -5V -1.8 V ICBO Collector Cutoff Current VCB= -150V; IE= 0 -50 μ A IEBO Emitter Cutoff Current VEB= -3V; IC= 0 -50 μ A hFE-1 DC Current Gain IC= -20mA; VCE= -5V 20 hFE-2 DC Current Gain IC= -1A; VCE= -5V 60 200 hFE-3 DC Current Gain IC= -7A; VCE= -5V 20 fT Current-Gain —Bandwidth Product IC= -0.5A; VCE= -5 V; f= 1MHz 200 MHz h FE-2Classifications Q S P 60-120 80-160 100-200 |
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