2SB813 datasheet(1/2 Pages) ISC

部件名	2SB813

功能描述	Good Linearity of hFE

PDF	2 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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1 / 2 page

INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

1

isc Silicon PNP Power Transistor

2SB813

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -60V(Min)

·Good Linearity of hFE

·High Power Dissipation

APPLICATIONS

·Designed for AF power amplifier applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-60

V

VCEO

Collector-Emitter Voltage

-60

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-4

A

ICM

Collector Current-Peak

-8

A

PC

Collector Power Dissipation

@ TC=25℃

40

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

类似零件编号 - 2SB813

制造商	部件名	数据表	功能描述
New Jersey Semi-Conduct...	2SB813	70Kb / 2P	Silicon PNP Power Transistor

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