ZXTP2012G

Document number: DS33712 Rev. 2 - 2

2 of 7

www.diodes.com

December 2015

© Diodes Incorporated

ZXTP2012G

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

-100

V

Collector-Emitter Voltage

-60

V

Emitter-Base Voltage

-7

V

Continuous Collector Current

-5.5

A

Peak Pulse Current

-15

A

Characteristic

Symbol

Value

Unit

Power Dissipation

Linear Derating Factor

(Note 5)

3.0

24

W

mW/°C

(Note 6)

1.6

12.8

Thermal Resistance, Junction to Ambient

(Note 5)

42

°C/W



(Note 6)

78

Thermal Resistance, Junction to Lead

(Note 7)

8.8

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Value

Unit

JEDEC Class

Electrostatic Discharge

– Human Body Model

ESD HBM

4,000

V

3A

Electrostatic Discharge

– Machine Model

ESD MM

400

V

C

Notes:

5. For a device mounted with the collector lead on 52mm x 52mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air

conditions whilst operating in steady-state.

6. Same as Note 5, except the device is mounted on 25mm x 25mm 1oz copper.

7. Thermal resistance from junction to solder-point (at the end of the collector lead).

8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.