2SC3582 datasheet(1/6 Pages) ISC

部件名	2SC3582

功能描述	Low Noise and High Gain

PDF	6 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc RF Product Specification

isc website：www.iscsemi.cn

1

isc Silicon NPN RF Transistor

2SC3582

DESCRIPTION

·

Low Noise Figure, High Gain, and High Current Capability

Achieve a Very Wide Dynamic Range and Excellent Linearity.

·

Low Noise and High Gain

NF = 1.2 dB TYP. @f = 1.0 GHz

Ga = 12 dB TYP.

@f = 1.0 GHz

APPLICATIONS

·

Designed for use in low-noise and small signal amplifiers

from VHF ~ UHF band.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

20

V

VCEO

Collector-Emitter Voltage

10

V

VEBO

Emitter-Base Voltage

1.5

V

IC

Collector Current-Continuous

65

mA

PC

Collector Power Dissipation

@TC=25℃

0.6

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

类似零件编号 - 2SC3582

制造商	部件名	数据表	功能描述
NEC	2SC3582	99Kb / 8P	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

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