2SC3130 datasheet(2/3 Pages) ISC

部件名	2SC3130

功能描述	High Current-Gain Bandwidth Product

PDF	3 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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2 / 3 page

INCHANGE Semiconductor

isc RF Product Specification

isc website：www.iscsemi.cn

isc Silicon NPN RF Transistor

2SC3130

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= 10μA ; IC= 0

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= 2mA ; IB= 0

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 20mA ; IB= 4mA

0.5

ICBO

Collector Cutoff Current

VCB= 10V; IE= 0

hFE

DC Current Gain

IC= 5mA ; VCE= 4V

400

Current-Gain—Bandwidth Product

IE= -5mA ; VCB= 4V; f= 200MHz

1.4

1.9

2.5

GHz

COB

Output Capacitance

IE= 0 ; VCB= 4V; f= 1MHz

1.4

rbb’ • CC

Base Time Constant

IE= -5mA ; VCB= 4V; f= 31.9MHz

Cre

Feed-Back Capacitance

IE= 0 ; VCB= 4V; f= 1.0MHz

0.45

hFE Classification

Class

Marking

ISP

ISQ

ISR

hFE

75-130

110-220

200-400

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