2N6898 datasheet(1/2 Pages) ISC

部件名	2N6898

功能描述	SOA is power-dissipation limited

PDF	2 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

1

isc P-Channel MOSFET Transistor

2N6898

DESCRIPTION

·SOA is power-dissipation limited

·Nanosecond switching speeds

·Linear transfer characteristics

·High input impedance

·Majority carrier device

APPLICATIONS

· The 2N6898 is designed for application such as

switching regulators,switching converters,motor drivers,

relay drivers and drivers for high-power bipolar switching

transistors requiring high speed and low gate-driver power

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

ARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage (VGS=0)

-100

V

VGS

Gate-Source Voltage

±20

V

ID

Drain Current-continuous@ TC=37℃

-25

A

Ptot

Total Dissipation@TC=25℃

150

W

Tj

Max. Operating Junction Temperature

-55~150

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

0.83

℃/W

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类似零件编号 - 2N6898

制造商	部件名	数据表	功能描述
New Jersey Semi-Conduct...	2N6898	284Kb / 2P	POWER MOS FIELD-EFFECT TRANSISTORS
America Semiconductor, ...	2N6898	1,006Kb / 4P	P-Ch. Enhancement Mode Power MOS Field Effect Transistor

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