2N6767 datasheet(1/2 Pages) ISC

部件名	2N6767

功能描述	VGS Rated at 짹20V

PDF	2 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

1

isc N-Channel MOSFET Transistor

2N6767

DESCRIPTION

·VGS Rated at ±20V

·Silicon Gate for fast switching speeds

·I

DSS 、RDS(ON) ，specified at elevated temperature

·Low drive requirements

APPLICATIONS

designed for high power ,high speed application ,such as

switching applies,UPS,AC and DC motor controls ,

relay and high energy pulse circuits.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

ARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage (VGS=0)

350

V

VGS

Gate-Source Voltage

±20

V

ID

Drain Current-continuous@ TC=37℃

12

A

Ptot

Total Dissipation@TC=25℃

150

W

Tj

Max. Operating Junction Temperature

-55~150

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

0.83

℃/W

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类似零件编号 - 2N6767

制造商	部件名	数据表	功能描述
Fairchild Semiconductor	2N6767	140Kb / 5P	N-Channel Power MOSFETs, 15A, 350V/400V
New Jersey Semi-Conduct...	2N6767	258Kb / 2P	N-CHANNEL ENHANCEMENT-MODE

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