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ADG820 数据表(PDF) 2 Page - Analog Devices

部件名 ADG820
功能描述  0.5 OHM CMOS 1.8 V to 5.5 V 2:1 Mux/SPDT Switches
PDF  12 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADG820 数据表(HTML) 2 Page - Analog Devices

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REV. 0
–2–
ADG819/ADG820–SPECIFICATIONS1 (V
DD = 5 V
10%, GND = 0 V.)
–40 C to –40 C to
Parameter
25 C
+85 C
+125 C
2
Unit
Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
0 V to VDD
V
ON Resistance (RON)
0.5
Ω typ
VS = 0 V to VDD, IS = 100 mA;
0.6
0.7
0.8
Ω max
Test Circuit 1
ON Resistance Match Between
Channels (
∆R
ON)0.06
Ω typ
VS = 0 V to VDD, IS = 100 mA
0.08
0.1
0.12
Ω max
ON Resistance Flatness (RFLAT(ON))
0.1
Ω typ
VS = 0 V to VDD, IS = 100 mA
0.17
0.2
0.25
Ω max
LEAKAGE CURRENTS
VDD = 5.5 V
Source OFF Leakage IS (OFF)
±0.01
nA typ
VS = 4.5 V/1 V, VD = 1 V/4.5 V;
±0.25
±3
±10
nA max
Test Circuit 2
Channel ON Leakage ID, IS (ON)
±0.01
nA typ
VS = VD = 1 V, or VS = VD = 4.5 V;
±0.25
±3
±25
nA max
Test Circuit 3
DIGITAL INPUTS
Input High Voltage, VINH
2.0
V min
Input Low Voltage, VINL
0.8
V max
Input Current
IINL or IINH
0.005
µA typ
VIN = VINL or VINH
±0.1
µA max
CIN, Digital Input Capacitance
5
pF typ
DYNAMIC CHARACTERISTICS
3
ADG819
tON
35
ns typ
RL = 50
Ω, CL = 35 pF,
45
50
55
ns max
VS = 3 V; Test Circuit 4
tOFF
10
ns typ
RL = 50
Ω, C
L = 35 pF,
16
18
21
ns max
VS = 3 V; Test Circuit 4
Break-Before-Make Time Delay, tBBM
5
ns typ
RL = 50
Ω, CL = 35 pF,
1
ns min
VS1 = VS2 = 3 V; Test Circuit 5
ADG820
tON
10
ns typ
RL = 50
Ω, CL = 35 pF,
18
20
22
ns max
VS = 3 V; Test Circuit 4
tOFF
26
ns typ
RL = 50
Ω, CL = 35 pF,
40
45
50
ns max
VS = 3 V; Test Circuit 4
Make-Before-Break Time Delay, tMBB
15
ns typ
RL = 50
Ω, C
L = 35 pF,
1
ns min
VS = 0 V; Test Circuit 6
Charge Injection
20
pC typ
VS = 2.5 V, RS = 0
Ω, CL = 1 nF;
Test Circuit 7
Off Isolation
–71
dB typ
RL = 50
Ω, CL = 5 pF, f = 100 kHz;
Test Circuit 8
Channel-to-Channel Crosstalk
–72
dB typ
RL = 50
Ω, C
L = 5 pF, f = 100 kHz;
Test Circuit 10
Bandwidth –3 dB
17
MHz typ
RL = 50
Ω, CL = 5 pF; Test Circuit 9
CS (OFF)
80
pF typ
f = 1 MHz
CD, CS (ON)
300
pF typ
f = 1 MHz
POWER REQUIREMENTS
VDD = 5.5 V
Digital Inputs = 0 V or 5.5 V
IDD
0.001
µA typ
1.0
2.0
µA max
NOTES
1Temperature range is as follows: –40
°C to +125°C.
2ON resistance parameters tested with I
S = 10 mA.
3Guaranteed by design, not subject to production test.
Specifications subject to change without notice.



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