2SD1616 datasheet(1/3 Pages) UTC

部件名	2SD1616

功能描述	NPN EPITAXIAL SILICON TRANSISTOR

PDF	3 Pages

Scroll/Zoom	100%

制造商	UTC [Unisonic Technologies]

网页	http://www.utc-ic.com

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1 / 3 page

UTC 2SD1616/A

NPN EPITAXIAL SILICON TRANSISTOR

UTC UNISONIC TECHNOLOGIES CO., LTD.

1

QW-R201-008,A

NPN EPITAXIAL SILICON

TRANSISTOR

DESCRIPTION

*Audio frequency power amplifier

*Medium speed switching

TO-92

1

1: EMITTER

2: COLLECTOR

3: BASE

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

VALUE

UNIT

Storage Temperature

Tstg

-55 ~+150

°C

Junction Temperature

Tj

150

°C

Total Power Dissipation (Ta=25

°C)

Pc

750

mW

Collector to Base Voltage:

D1616

D1616A

VCBO

60

120

V

Collector to Emitter Voltage: D1616

D1616A

VCEO

50

60

V

Emitter to Base Voltage

VEBO

6

V

Collector Current (DC)

Ic

1

A

Collector Current (*Pulse)

Ic

2

A

Note: (*) Pulse width

≤10ms, Duty cycle<50%

CHARACTERISTICS (Ta=25

°C)

CHARACTERISTIC

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Collector Cut-Off Current

ICBO

VCB=60V

100

nA

Emitter Cut-Off Current

IEBO

VEB= 6V

100

nA

Collector-Emitter Saturation Voltage

VCE(SAT)

IC=1A, IB=50mA

0.15

0.3

V

Base-Emitter Saturation Voltage

VBE(SAT)

IC=1A, IB=50mA

0.9

1.2

V

Base Emitter On Voltage

VBE(ON)

VCE=2V, IC=50mA

600

640

700

mV

DC Current Gain: D1616

D1616A

hFE1

VCE=2V, IC=100mA

135

600

400

hFE2

VCE=2V, IC=1A

81

Current Gain Bandwidth Product

fT

VCE=2V, IC=100mA

100

160

MHz

Output Capacitance

Cob

VCB=10V, f=1MHz

19

pF

Turn On Time

ton

VCE=10V, IC=100mA

0.07

us

类似零件编号 - 2SD1616

制造商	部件名	数据表	功能描述
NEC	2SD1616	156Kb / 2P	NPN SILICON TRANSISTORS
Weitron Technology	2SD1616	1Mb / 5P	NPN Transistors
Unisonic Technologies	2SD1616	66Kb / 4P	NPN EPITAXIAL SILICON TRANSISTOR
Unisonic Technologies	2SD1616	184Kb / 4P	NPN EPITAXIAL SILICON TRANSISTOR
SHENZHEN YONGERJIA INDU...	2SD1616	148Kb / 1P	TRANSISTOR (NPN)

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