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2SC5089 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC5089 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 7 page ![]() INCHANGE Semiconductor isc RF Product Specification isc website:www.iscsemi.cn 2 isc Silicon NPN RF Transistor 2SC5089 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT ICBO Collector Cutoff Current VCB= 10V; IE= 0 1 μ A IEBO Emitter Cutoff Current VEB= 1V; IC= 0 1 μ A hFE DC Current Gain IC= 20mA ; VCE= 8V 50 160 ︱ S21e︱2 Insertion Power Gain IC= 20mA;VCE= 8V; f= 1GHz 10 13 dB ︱ S21e︱2 Insertion Power Gain IC= 20mA;VCE= 8V; f= 2GHz 7 dB fT Current-Gain—Bandwidth Product IC= 20mA ; VCE= 8V 7 10 GHz COB Output Capacitance IE= 0 ; VCB= 10V;f= 1.0MHz 0.7 pF Cre Feedback Capacitance IE= 0 ; VCB= 10V;f= 1.0MHz 0.5 0.95 pF NF Noise Figure IC= 5mA ; VCE= 8V;f= 1GHz 1.1 2.5 dB NF Noise Figure IC= 5mA ; VCE= 8V;f= 2GHz 1.7 dB hFE Classification R O 50-100 80-160 |
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