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2SC5949 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC5949 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor 2SC5949 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 200 V VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 1A 3.0 V VBE(on) Base-Emitter On Voltage IC= 8A ; VCE= 5V 1.5 V ICBO Collector Cutoff Current VCB= 200V ; IE= 0 5 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 5 μA hFE-1 DC Current Gain IC= 1A ; VCE= 5V 55 160 hFE-2 DC Current Gain IC= 8A ; VCE= 5V 35 COB Output Capacitance IE=0 ; VCB= 10V;f= 1.0MHz 470 pF fT Current-Gain—Bandwidth Product IC=1A ; VCE= 5V 25 MHz hFE-1 Classifications R O 55-110 80-160 |
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