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2SD1269 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1269 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn 2 isc Silicon NPN Power Transistor 2SD1269 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 80 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.15A 0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.15A 1.5 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 10 μ A IEBO Emitter Cutoff Current VEB= 5V; IC= 0 50 μ A hFE-1 DC Current Gain IC= 0.1A; VCE= 2V 45 hFE-2 DC Current Gain IC= 1A; VCE= 2V 60 260 fT Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 10V; f= 10MHz 30 MHz Switching times ton Turn-on Time IC= 1A ; IB1= -IB2= 0.1A; VCC= 50V 0.5 μ s tstg Storage Time 2.5 μ s tf Fall Time 0.15 μ s hFE-2 classifications R Q P 60-120 90-180 130-260 |
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