2SD1314 datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc Silicon NPN Power Transistor

2SD1313

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= 10mA; IB= 0

350

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 15A; IB= 3A

1.0

VBE(sat)

Base-Emitter Saturation Voltage

IC= 15A; IB= 3A

1.7

ICBO

Collector Cutoff Current

VCB= 800V; IE= 0

IEBO

Emitter Cutoff Current

VEB= 7V; IC= 0

hFE-1

DC Current Gain

IC= 1A; VCE= 5V

hFE-2

DC Current Gain

IC= 25A; VCE= 5V

COB

Output Capacitance

IE=0; VCB= 50V; ftest= 1MHz

170

Current-Gain—Bandwidth Product

IC= 1A; VCE= 10V

MHz

Switching Times

ton

Turn-on Time

IC= 15A; IB1= -IB2= 3A;

RL= 13.3Ω; VCC≈ 200V

PW=20μs; Duty Cycle≤1%

0.8

tstg

Storage Time

3.0

Fall Time

0.5

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