2SD879 datasheet(1/2 Pages) ISC

部件名	2SD879

功能描述	High Collector Current-IC= 3.0A

PDF	2 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

标志

1 / 2 page

INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

1

isc Silicon NPN Power Transistor

2SD879

DESCRIPTION

·

High Collector Current-IC= 3.0A

·

Low Saturation Voltage -

: VCE(sat)= 0.4V(Max)@ IC= 3.0A, IB= 60mA（Pulse）

·

Excellent Linearity of hFE in The Region From Low

Current to High Current.

APPLICATIONS

·

In applications where two NiCd batteries are used to

provide 2.4V, two 2SD879s are used.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

30

V

VCEO

Collector-Emitter Voltage

10

V

VCEX

Collector-Emitter Voltage

20

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

3.0

A

ICP

Collector Current-Pulse

5.0

A

PC

Collector Power Dissipation

1.0

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

类似零件编号 - 2SD879

制造商	部件名	数据表	功能描述
Sanyo Semicon Device	2SD879	94Kb / 4P	1.5V, 3V Strobe Applications
Unisonic Technologies	2SD879	91Kb / 3P	1.5V, 3V STROBE APPLICATIONS
Dc Components	2SD879	213Kb / 1P	TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Unisonic Technologies	2SD879	95Kb / 3P	1.5V, 3V STROBE APPLICATIONS
Unisonic Technologies	2SD879	98Kb / 2P	1.5V, 3V STROBE APPLICATIONS

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