2SD1606 datasheet(1/2 Pages) ISC

部件名	2SD1606

功能描述	High DC Current Gain

PDF	2 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

1

isc Silicon NPN Darlington Power Transistor

2SD1606

DESCRIPTION

·

Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 120V(Min)

·

High DC Current Gain

: hFE= 1000(Min) @IC= 3A

APPLICATIONS

·

Designed for low frequency power amplifiers applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

120

V

VCEO

Collector-Emitter Voltage

120

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

6

A

ICP

Collector Current-Peak

12

A

PC

Collector Power Dissipation

@ TC=25℃

40

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

类似零件编号 - 2SD1606

制造商	部件名	数据表	功能描述
Hitachi Semiconductor	2SD1606	35Kb / 6P	Silicon NPN Triple Diffused
Renesas Technology Corp	2SD1606	150Kb / 7P	Silicon NPN Triple Diffused

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类似说明 - 2SD1606

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