BD956 datasheet(2/2 Pages) ISC

部件名	BD956

功能描述	Collector-Emitter Breakdown Voltage-: V(BR)CEO= -120V(Min)

PDF	2 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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2 / 2 page

INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc Silicon PNP Power Transistor

BD956

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= -1mA ; IB= 0

-120

V(BR)CBO

Collector-Base Breakdown Voltage

IC= -1mA ; IE= 0

-120

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= -1mA ; IC= 0

-5

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -2A; IB= -0.2A

-1.0

VBE(on)

Base-Emitter On Voltage

IC= -2A; VCE= -4V

-1.4

ICBO

Collector Cutoff Current

VCB= -120V; IE= 0

-50

μA

VCB= -60V; IE= 0,TJ=150℃

-1.0

ICEO

Collector Cutoff Current

VCE= -60V; IB= 0

-0.1

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

-0.2

hFE-1

DC Current Gain

IC= -500mA ; VCE= -4V

hFE-2

DC Current Gain

IC= -2A ; VCE= -4V

Current-Gain—Bandwidth Product

IC= -500mA ; VCE= -4V

MHz

Switching Times

ton

Turn-On Time

IC= -1.0A; IB1= -IB2= -0.1A;

VCC= -20V; RL= 20Ω

0.1

μs

toff

Turn-Off Time

0.4

μs

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