CT3A01-R3 datasheet(1/11 Pages) CTMICRO

部件名	CT3A01-R3

功能描述	N-Channel Enhancement MOSFET

PDF	11 Pages

Scroll/Zoom	100%

制造商	CTMICRO [CT Micro International Corporation]

网页	http://www.ct-micro.com/

标志

1 / 11 page

CT Micro

Rev 4

Proprietary & Confidential

Page 1

Jun, 2015

CT3A01-R3

N-Channel Enhancement MOSFET

Package Outline

Schematic

Features

••••

Drain-Source Breakdown Voltage VDSS 20 V

••••

Drain-Source On-Resistance

••••

RDS(ON) 55m

Ω, at VGS= 4.5V, ID=3.2A

RDS(ON) 65m

Ω, at VGS= 2.5V, ID= 2.5A

RDS(ON) 80m

Ω, at VGS= 1.8V, ID= 2.0A

••••

Continuous Drain Current at TA=25

℃ID = 3.2A

••••

Advanced high cell density Trench Technology

••••

RoHS Compliance & Halogen Free

Applications

••••

Power Management

••••

Portable Equipment

••••

Load switch

Description

The CT3A01-R3 uses high performance Trench

Technology to provide excellent RDS(ON) and low gate

charge which is suitable for most of the synchronous

buck converter applications.

Gate

Source

Drain

Gate

Drain

Source

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