CT2301-R3 datasheet(3/11 Pages) CTMICRO

3 / 11 page

CT Micro

Rev 4

Proprietary & Confidential

Page 3

Aug, 2015

CT2301-R3

P-Channel Enhancement MOSFET

Electrical Characteristics T

A = 25°C (unless otherwise specified)

Static Characteristics

Symbol

Parameters

Test Conditions

Min

Typ

Max

Units

Notes

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID= - 0.25µA

-20

IDSS

Drain-Source Leakage Current

VDS = -20V, VGS = 0V

-1

µ A

IGSS

Gate-Source Leakage Current

VGS = ±12`V, VDS = 0V

±100

On Characteristics

Symbol

Parameters

Test Conditions

Min

Typ

Max

Units

Notes

RDS(ON)

Drain-Source On-Resistance

VGS = -4.5V, ID = -3.0A

100

Ω

VGS = -2.5V, ID = -2.0A

100

150

Ω

VGS(TH)

Gate-Source Threshold Voltage

VGS = VDS, ID = -0.25µA

-0.4

-0.9

Dynamic Characteristics

Symbol

Parameters

Test Conditions

Min

Typ

Max

Units

Notes

CISS

Input Capacitance

VDS = - 8V ,

VGS = 0V,

f=1MHz

640

COSS

Output Capacitance

CRSS

Reverse Transfer Capacitance

Switching Characteristics

Symbol

Parameters

Test Conditions

Min

Typ

Max

Units

Notes

TD(ON)

Turn-On Delay Time

VDS = -10V , VGS = - 4.5V,

RG = 4.7 ,

ID = -2.8A

Rise Time

28.2

TD(OFF)

Turn-Off Delay Time

27.1

Fall Time

9.2

Total Gate Charge

VDS = -4.5V , VGS = -10V,

ID = -2.8A

7.65

QGS

Gate-Source Charge

1.1

QGD

Gate-Drain (Miller) Charge

1.95

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