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CT2306-R3 数据表(PDF) 1 Page - CT Micro International Corporation |
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CT2306-R3 数据表(HTML) 1 Page - CT Micro International Corporation |
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1 / 10 page  CT Micro Rev 2 Proprietary & Confidential Page 1 Jun, 2015 CT2306-R3 N-Channel Enhancement MOSFET Package Outline Schematic Features •••• Drain-Source Breakdown Voltage VDSS 30 V •••• Drain-Source On-Resistance •••• RDS(ON) 25m Ω, at VGS= 10V, ID=4.0A RDS(ON) 36m Ω, at VGS= 4.5V, ID= 3.5A •••• Continuous Drain Current at TA=25 ℃ID = 4.7A •••• Advanced high cell density Trench Technology •••• RoHS Compliance & Halogen Free Applications •••• Power Management •••• DC-DC Converter •••• Load Switch Description The CT2306-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications. Gate Source Drain Gate Drain Source |
类似零件编号 - CT2306-R3 |
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类似说明 - CT2306-R3 |
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