数据搜索系统，热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

预览 PDF HTML

CT357D 数据表(PDF) 3 Page - CT Micro International Corporation

部件名 CT357D
功能描述  DC Input 4-Pin Mini-Flat Phototransistor Optocoupler
PDF  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  CTMICRO [CT Micro International Corporation]
网页  http://www.ct-micro.com/
标志 CTMICRO - CT Micro International Corporation

CT357D 数据表(HTML) 3 Page - CT Micro International Corporation

  CT357D Datasheet HTML 1Page - CT Micro International Corporation CT357D Datasheet HTML 2Page - CT Micro International Corporation CT357D Datasheet HTML 3Page - CT Micro International Corporation CT357D Datasheet HTML 4Page - CT Micro International Corporation CT357D Datasheet HTML 5Page - CT Micro International Corporation CT357D Datasheet HTML 6Page - CT Micro International Corporation CT357D Datasheet HTML 7Page - CT Micro International Corporation CT357D Datasheet HTML 8Page - CT Micro International Corporation CT357D Datasheet HTML 9Page - CT Micro International Corporation Next Button
Zoom Inzoom in Zoom Outzoom out
 3 / 10 page
background image
CT Micro
Rev 3
Proprietary & Confidential
Page 3
Feb, 2015
CT357 Series
DC Input 4-Pin Mini-Flat Phototransistor Optocoupler
Electrical Characteristics T
A = 25°C (unless otherwise specified)
Emitter Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
Max
Units
Notes
VF
Forward voltage
IF=10mA
-
1.24
1.4
V
IR
Reverse Current
VR = 6V
-
-
5
µ A
CIN
Input Capacitance
f= 1MHz
-
10
250
pF
Detector Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
Max
Units
Notes
BVCEO
Collector-Emitter Breakdown
IC= 100µA
80
-
-
V
BVECO
Emitter-Collector Breakdown
IE= 1mA
7
-
-
V
ICEO
Collector-Emitter Dark Current
VCE= 20V, IF=0mA
-
-
100
nA
Transfer Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
Max
Units
Notes
CTR
Current Transfer Ratio
CT357
IF= 5mA, VCE= 5V
50
-
600
%
CT357A
80
-
160
CT357B
130
-
260
CT357C
200
-
400
CT357D
300
-
600
VCE(SAT)
Collector-Emitter Saturation
Voltage
IF= 20mA, IC= 1mA
-
0.06
0.2
V
RIO
Isolation Resistance
VIO= 500VDC
5x1010
-
-
Ω
CIO
Isolation Capacitance
f= 1MHz
-
0.5
1
pF
Switching Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
Max
Units
Notes
tr
Rise Time
IC= 2mA, VCE= 2V, RL= 100
Ω
-
6
18
µ s
tf
Fall Time
-
8
18



Html Pages

1 2 3 4 5 6 7 8 9 10


数据表 下载

Go To PDF Page


链接网址



ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   数据表链接    |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com