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CT3150VSL 数据表(PDF) 4 Page - CT Micro International Corporation |
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CT3150VSL 数据表(HTML) 4 Page - CT Micro International Corporation |
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4 / 15 page ![]() CT Micro Rev 2 Proprietary & Confidential Page 4 Jun, 2015 CT3150 1.0A MOSFET/IGBT Gate Driver Optocoupler Electrical Characteristics Typical values are measured at Vcc=30V, VEE= Gnd, TA = -400C to 1000C (unless otherwise specified) Switching Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes TPHL High to Low Propagation Delay IF= 7 to 16mA, Cg= 3nF, Rg= 47 - 110 200 ns TPLH Low to High Propagation Delay - 120 200 ns PWD Pulse Width Distortion - - 45 ns tPSK Propagation Delay Skew - - 38 ns tr Rise Time - 30 100 ns tf Fall Time - 15 60 ns |CMH| Common Mode Transient High VCC= 30V, TA= 250C, VCM= 1kV IF= 7 to 16mA VO(min)=26V -20 - - kV/µs |CML| Common Mode Transient Low IF= 0mA VO(max)=1V 20 - - kV/µs |
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