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MMBTA43 数据表(PDF) 2 Page - Comchip Technology

部件名 MMBTA43
功能描述  High Voltage Transistors
PDF  3 Pages
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制造商  COMCHIP [Comchip Technology]
网页  http://www.comchiptech.com
标志 COMCHIP - Comchip Technology

MMBTA43 数据表(HTML) 2 Page - Comchip Technology

  MMBTA43 Datasheet HTML 1Page - Comchip Technology MMBTA43 Datasheet HTML 2Page - Comchip Technology MMBTA43 Datasheet HTML 3Page - Comchip Technology  
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MDS0605002A
Page 2
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage (Note 3)
(IC = 1.0 mAdc, IB = 0)
MMBTA42
MMBTA43
V(BR)CEO
300
200
−
−
Vdc
Collector − Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
MMBTA42
MMBTA43
V(BR)CBO
300
200
−
−
Vdc
Emitter − Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
V(BR)EBO
6.0
−
Vdc
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
MMBTA42
(VCB = 160 Vdc, IE = 0)
MMBTA43
ICBO
−
−
0.1
0.1
mAdc
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
MMBTA42
(VEB = 4.0 Vdc, IC = 0)
MMBTA43
IEBO
−
−
0.1
0.1
mAdc
ON CHARACTERISTICS (Note 3)
DC Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc)
Both Types
(IC = 10 mAdc, VCE = 10 Vdc)
Both Types
(IC = 30 mAdc, VCE = 10 Vdc)
MMBTA42
MMBTA43
hFE
25
40
40
40
−
−
−
−
−
Collector − Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
MMBTA42
MMBTA43
VCE(sat)
−
−
0.5
0.5
Vdc
Base−Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
VBE(sat)
−
0.9
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current − Gain − Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
fT
50
−
MHz
Collector−Base Capacitance
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
MMBTA42
MMBTA43
Ccb
−
−
3.0
4.0
pF
3. Pulse Test: Pulse Width
v 300 ms, Duty Cycle v 2.0%.
High Voltage Transistors
www.comchiptech.com
COMCHIP
COMCHIP
ELECTRICAL CHARACTERISTICS (TA = 25OC unless otherwise noted)



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