BDY20 datasheet(1/2 Pages) ISC

部件名	BDY20

功能描述	Excellent Safe Operating Area

PDF	2 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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1 / 2 page

INCHANGE Semiconductor

isc Product Specification

1

isc website：www.iscsemi.cn

isc Silicon NPN Power Transistor

BDY20

DESCRIPTION

·Excellent Safe Operating Area

·DC Current Gain

-hFE=20-70@IC = 4A

·Collector-Emitter Saturation Voltage-

: VCE(sat)= 1.1V(Max)@ IC = 4A

APPLICATIONS

·Designed for general-purpose switching and amplifier

applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.52

℃/W

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

100

V

VCEO

Collector-Emitter Voltage

60

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

15

A

IB

Base Current

7

A

PC

Collector Power Dissipation@TC=25℃

115

W

TJ

Junction Temperature

200

℃

Tstg

Storage Temperature

-65~200

℃

类似零件编号 - BDY20

制造商	部件名	数据表	功能描述
Seme LAB	BDY20	12Kb / 1P	Bipolar NPN Device
New Jersey Semi-Conduct...	BDY20	130Kb / 2P	Silicon NPN Power Transistor
Solitron Devices Inc.	BDY20	353Kb / 2P	PRO-ELECTRON POWER TRANSISTORS

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