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BU508A-2 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BU508A-2 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn 2 isc Silicon NPN Power Transistor BU508A-2 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; IB= 0 900 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2.0A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4.5A; IB= 2.0A 1.3 V ICES Collector Cutoff Current VCE= 1500V ; VBE= 0 1 mA IEBO Emitter Cutoff Current VEB= 6.0V ; IC= 0 10 mA hFE-1 DC Current Gain IC= 0.5A ; VCE= 5V 8 hFE-2 DC Current Gain IC= 4A ; VCE= 5V 10 fT Current-Gain—Bandwidth Product IC= 0.1A; VCE= 5V; 3 MHz Switching times tf Fall Time IC= 4A , IB1= 0.8A; IB2= -1.6A 0.4 μs |
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