BU508AT datasheet(2/2 Pages) ISC

部件名	BU508AT

功能描述	Collector-Emitter Sustaining Voltage-: VCEO(SUS)= 700V (Min)

PDF	2 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

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isc Silicon NPN Power Transistor

BU508AT

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 100mA; IB= 0

700

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 4.5A; IB= 2.0A

1.0

VBE(sat)

Base-Emitter Saturation Voltage

IC= 4.5A; IB= 2.0A

1.5

ICES

Collector Cutoff Current

VCE= 1300V; VBE= 0

VCE= 1300V; VBE= 0; TC=125℃

0.1

2.0

IEBO

Emitter Cutoff Current

VEB= 5.0V; IC= 0

hFE-1

DC Current Gain

IC= 0.1A; VCE= 5V

COB

Output Capacitance

IE= 0; VCB= 10V; ftest= 0.1MHz

125

Current-Gain—Bandwidth Product

IC= 0.1A; VCE= 5V; ftest= 1.0MHz

MHz

Switching times

tstg

Storage Time

IC= 4.5A , IB1= 1.8A; LB= 10μH

8.0

μs

Fall Time

0.5

μs

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