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BU807 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BU807 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 isc Silicon NPN Darlington Power Transistor BU807 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0 150 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 50mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 50mA 2.4 V ICES Collector Cutoff Current VCE= 330V; VBE= 0 0.1 mA ICEV Collector Cutoff Current VCE= 330V; VBE(off)= 6V 0.1 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 3.0 mA VECF C-E Diode Forward Voltage IF= 4A 2.0 V |
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