BU920P datasheet(1/2 Pages) ISC

部件名	BU920P

功能描述	High Voltage

PDF	2 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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1 / 2 page

INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

1

isc Silicon NPN Darlington Power Transistor

BU920P

DESCRIPTION

·High Voltage

·DARLINGTON

APPLICATIONS

·Designed for automotive ignition applications and inverter

circuits for motor control.

ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCES

Collector-Emitter Voltage VBE= 0

400

V

VCEO

Collector-Emitter Voltage

350

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current

10

A

ICM

Collector Current-peak

15

A

IB

Base Current

5

A

PC

Collector Power Dissipation

@TC=25℃

105

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

1.2

℃/W

类似零件编号 - BU920P

制造商	部件名	数据表	功能描述
STMicroelectronics	BU920P	272Kb / 5P	HIGH VOLTAGE POWER DISSIPATION Oct-1988
STMicroelectronics	BU920PFI	272Kb / 5P	HIGH VOLTAGE POWER DISSIPATION Oct-1988
Inchange Semiconductor ...	BU920PFI	248Kb / 2P	isc Silicon NPN Darlington Power Transistor

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