Rating and Characteristic Curves (

EF1A Thru EF1J)

www.comchip.com.tw

COMCHIP

COMCHIP

Forward Voltage (V)

Fig.2 - Forward Characteristics

MDS0312011A

Page 2

0

0.2

0.4

0.6 0.8

1.0 1.2

1.4

1.6

1.8

2.0

Fig. 4 - Non Repetitive Forward

Surge Current

Number of Cycles at 60Hz

Efficient Fast Recovery Rectifier

Fig. 6 - Current Derating Curve

Fig. 5 - Test Circuit Diagram and Reverse Recovery Time Characteristics

(+)

(+)

25Vdc

(approx.)

( )

( )

PULSE

GENERATOR

(NOTE 2)

OSCILLISCOPE

(NOTE 1)

1

NON-

INDUCTIVE

W

NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.

2. Rise Time= 10ns max., Source Impedance= 50 ohms.

+0.5A

0

-0.25A

-1.0A

|

|

|

|

|

|

|

|

1cm

SET TIME BASE FOR

50 / 10ns / cm

trr

D.U.T.

10

NONINDUCTIVE

50

NONINDUCTIVE

W

W

0

10

20

50

40

30

1

5

10

50

1 00

10

1.0

0.1

0.01

0.001

Single Phase

Half Wave 60Hz

0

15

30 45 60 75 90 105 120 135 150

100

10

1.0

0.1

0. 01

Percent of Rated Peak Reverse Voltage (%)

Fig. 1 - Reverse Characteristics

Tj=25 C

Tj=125 C

Tj=25 C

Pulse width 300uS

4% duty cycle

Tj=25 C

Ambient Temperature ( C)

0

25

50

75

100

125

150

175

2.8

2.4

2.0

1.6

1.2

0.8

0.4

0

8.3mS Single Half Sine

Wave JEDEC methode

Tj=75 C

0.01

0.1

1.0

10

100

Fig. 3 - Junction Capacitance

Reverse Voltage (V)

EF1

A-EF1D

EF1J

EF1G

35

30

25

20

15

10

5

0

f=1MHz and applied

4VDC reverse voltage

Tj=25 C

EF1A-EF1D

EF1G-EF1J