CTL015NS10-R3 datasheet(1/11 Pages) CTMICRO

部件名	CTL015NS10-R3

功能描述	Channel Enhancement MOSFET

PDF	11 Pages

Scroll/Zoom	100%

制造商	CTMICRO [CT Micro International Corporation]

网页	http://www.ct-micro.com/

标志

1 / 11 page

CT Micro

Rev 1

Proprietary & Confidential

Page 1

Jun, 2015

CTL015NS10-R3

N-Channel Enhancement MOSFET

Package Outline

Schematic

Features

••••

Drain-Source Breakdown Voltage VDSS 105 V

••••

Drain-Source On-Resistance

RDS(ON) 230m

Ω, at VGS= 10V, ID= 1.5A

RDS(ON) 275m

Ω, at VGS= 4.5V, ID= 1.0A

••••

Continuous Drain Current at TA=25

℃ID =1.5A

••••

Advanced high cell density Trench Technology

••••

RoHS Compliance & Halogen Free

Applications

••••

Power Management

••••

LCD Display inverter

••••

DC/DC Converter

••••

Load Switch

Description

The CTL015NS10-R3 is the N-Channel logic

enhancement mode power field effect transistors are

produced using high cell density, DMOS trench

technology. This high density process is especially

tailored to minimize on-state resistance.

Gate

Source

Drain

Gate

Drain

Source

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