CTL0035NS-R3 datasheet(3/11 Pages) CTMICRO

3 / 11 page

CT Micro

Rev 2

Proprietary & Confidential

Page 3

Jun, 2015

CTL0035NS-R3

N-Channel Enhancement MOSFET

Electrical Characteristics T

A = 25°C (unless otherwise specified)

Static Characteristics

Symbol

Parameters

Test Conditions

Min

Typ

Max

Units

Notes

BVDSS

Drain-Source Breakdown Voltage

VGS= 0V, ID= 250µA

IDSS

Drain-Source Leakage Current

VDS = 50V, VGS = 0V

µA

IGSS

Gate-Source Leakage Current

VGS =

±20V, VDS = 0V

±100

On Characteristics

Symbol

Parameters

Test Conditions

Min

Typ

Max

Units

Notes

RDS(ON)

Drain-Source On-Resistance

VGS = 10V, ID = 0.2A

1.3

VGS = 5V, ID = 0.2A

1.4

3.5

VGS = 2.75V, ID = 0.2A

1.6

VGS(th)

Gate-Source Threshold Voltage

VGS = VDS, I ID =250µA

0.7

---

1.5

Dynamic Characteristics

Symbol

Parameters

Test Conditions

Min

Typ

Max

Units

Notes

CISS

Input Capacitance

VGS =0V,

COSS

Output Capacitance

VDS =-25V

CRSS

Reverse Transfer Capacitance

f=1MHz

Switching Characteristics

Symbol

Parameters

Test Conditions

Min

Typ

Max

Units

Notes

TD(ON)

Turn-On Delay Time

VDS = 30V ,

VGS = 10V,

RG = 6 ,

RL= 103

4.63

Rise Time

18.9

TD(OFF)

Turn-Off Delay Time

6.8

Fall Time

11.4

Total Gate Charge

VDS = 25V ,

7.03

QGS

Gate-Source Charge

VGS = 10V,

1.84

QGD

Gate-Drain Charge

ID = 0.22A

0.65

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