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CTL043PS01-R3 数据表(PDF) 3 Page - CT Micro International Corporation

部件名 CTL043PS01-R3
功能描述  P-Channel Enhancement MOSFET
PDF  12 Pages
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制造商  CTMICRO [CT Micro International Corporation]
网页  http://www.ct-micro.com/
标志 CTMICRO - CT Micro International Corporation

CTL043PS01-R3 数据表(HTML) 3 Page - CT Micro International Corporation

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CT Micro
Rev 1
Proprietary & Confidential
Page 3
Jun, 2015
CTL043PS01-R3
P-Channel Enhancement MOSFET
Electrical Characteristics T
A = 25°C (unless otherwise specified)
Static Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
Max
Units
Notes
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID= -250µA
-12
-
-
V
IDSS
Drain-Source Leakage Current
VDS = -12V, VGS = 0V
-
-
-1
µ A
IGSS
Gate-Source Leakage Current
VGS = ±8V, VDS = 0V
-
-
±100
nA
On Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
Max
Units
Notes
RDS(ON)
Drain-Source On-Resistance
VGS = -4.5V, ID = -4.0A
-
47
58
m
Ω
Fig 4
VGS = -2.5V, ID = -3.0A
-
55
72
m
Ω
VGS = -1.8V, ID = -2.0A
-
67
120
m
Ω
VGS(TH)
Gate-Source Threshold Voltage
VGS = VDS, ID = -250µA
-0.5
-
-1.5
V
Fig 5
Dynamic Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
Max
Units
Notes
CISS
Input Capacitance
VDS = -4V ,
VGS = 0V,
f=1MHz
-
1176
-
pF
Fig 3
COSS
Output Capacitance
-
334
-
CRSS
Reverse Transfer Capacitance
-
276
-
Switching Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
Max
Units
Notes
TD(ON)
Turn-On Delay Time
VDS = -4V , VGS = -4.5V,
RG = 6 ,
ID = -1.0A
-
17.8
-
ns
Fig
11 & 12
TR
Rise Time
-
6.65
-
TD(OFF)
Turn-Off Delay Time
-
40.1
-
TF
Fall Time
-
17.04
QG
Total Gate Charge
VDS = -6V , .
VGS = -4.5V,
ID = -3.5A
-
10.5
-
nC
Fig
9 & 10
QGS
Gate-Source Charge
-
1.62
-
QGD
Gate-Drain (Miller) Charge
-
2.15
-



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