BV

R

DS(on) typ

I

HFS4N65FS

650V N-Channel MOSFET

1.Gate 2. Drain 3. Source

Absolute Maximum Ratings

T

unless otherwise specified

Symbol

Parameter

Value

Units

V

DSS

Drain-Source Voltage

650

V

I

D

Drain Current

– Continuous (T

)

4.0 *

A

Drain Current

– Continuous (T

)

2.5 *

A

I

DM

Drain Current

– Pulsed

(Note 1)

16 *

A

V

GS

Gate-Source Voltage

30

V

E

AS

Single Pulsed Avalanche Energy

(Note 2)

70

mJ

I

AR

Avalanche Current

(Note 1)

4.0

A

E

AR

Repetitive Avalanche Energy

(Note 1)

3.5

mJ

P

D

Power Dissipation (T

)

- Derate above 25

35

W

0.28

W/

T

Operating and Storage Temperature Range

-55 to +150

T

L

Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

300

Thermal Resistance Characteristics

Symbol

Parameter

Typ.

Max.

Units

R

JC

Junction-to-Case

--

3.6

/W

R

JA

Junction-to-Ambient

--

62.5

* Drain current limited by maximum junction temperature

July 2015

Originative New Design

Superior Avalanche Rugged Technology

Robust Gate Oxide Technology

Very Low Intrinsic Capacitances

Excellent Switching Characteristics

Unrivalled Gate Charge : 8.5 nC (Typ.)

Extended Safe Operating Area

Lower R

100% Avalanche Tested

Single Gauge Package

FEATURES

2

1

3

TO-220F