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RT9451 数据表(PDF) 3 Page - Richtek Technology Corporation |
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RT9451 数据表(HTML) 3 Page - Richtek Technology Corporation |
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3 / 37 page ![]() RT9451 3 DS9451-00 September 2013 www.richtek.com © Copyright 2013 Richtek Technology Corporation. All rights reserved. is a registered trademark of Richtek Technology Corporation. Functional Pin Description Pin No. Pin Name Pin Function 1 to 4 VIN Power Input. Bypass to PGND with a 10 μF ceramic capacitor. It also provides power to the load in boost mode. 5 INT Interrupt Pin (Open-Drain). This pin is pulled low when a fault occurs. 6 VIO I/O Reference Voltage. A VIO level above 0.6V disables automatic D+/D − detection. 7 DP USB Port D+ Input Connection. 8 DM USB Port D − Input Connection. 9 SCL I 2 C Interface Clock Input. Open-drain output, connect a 10k Ω pull-up resistor. 10 SDA I 2 C Interface Data Input. Open-drain output, connect a 10k Ω pull-up resistor. 11 STAT Charge Status Indicator. Pull low when charge is in progress. Open-drain for other conditions. This pin can also be controlled through I 2 C register. The STAT can be used to drive a LED or communicate with a host processor. 12 OTG Boost Mode Enable Control. Boost mode is turned on whenever this pin is active. Polarity is user defined through I 2 C register. The pin is disabled by default and can be enabled through I 2 C register bit. 13 BATS Auxiliary Power Supply. Connect to the battery pack to provide power in high impedance mode. Bypass to GND with a 1 μF ceramic capacitor. 14 ISENL Charge Current Sense Input. Battery current is sensed via the voltage drop across an external sense resistor. A 0.1 μF ceramic capacitor to PGND is required. 15 ISENR Battery Voltage and Current Sense Input. Bypass to PGND with a ceramic capacitor (minimum 0.1 μF) if there are long inductive leads to battery. 16 LDO LDO Output. LDO is regulated to 4.9V and drives 60mA of current. Bypass LDO to GND with a minimum 1 μF ceramic capacitor. LDO is enabled when VIN is above the VIN UVLO threshold. 17 MID_LDO LDO Input Voltage. Please connect to MID. 18 BOOT Bootstrap Supply for High-Side Gate Driver. Connect a 100nF ceramic capacitor (voltage rating above 10V) from BOOT pin to LX pin. 19 VDDP Internal Bias Regulator Voltage for Driver. Connect a 1 μF ceramic capacitor from this output to PGND. External loads on VDDP is not allowed. 20, 33 (Exposed Pad) GND Pure Ground. The exposed pad must be soldered to a large PCB and connected to GND for maximum thermal dissipation. 21 to 25 PGND Power Ground. 26 to 30 LX Switch Node. 31, 32 MID Connection Point Between Reverse Blocking MOSFET and High-Side MOSFET. Bypass to PGND with a minimum of 10 μF capacitor. No other circuits are recommended to connect at MID pin. |
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