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CTL0343NS-R3 数据表(PDF) 3 Page - CT Micro International Corporation

部件名 CTL0343NS-R3
功能描述  N-Channel Enhancement MOSFET
PDF  11 Pages
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制造商  CTMICRO [CT Micro International Corporation]
网页  http://www.ct-micro.com/
标志 CTMICRO - CT Micro International Corporation

CTL0343NS-R3 数据表(HTML) 3 Page - CT Micro International Corporation

  CTL0343NS-R3 Datasheet HTML 1Page - CT Micro International Corporation CTL0343NS-R3 Datasheet HTML 2Page - CT Micro International Corporation CTL0343NS-R3 Datasheet HTML 3Page - CT Micro International Corporation CTL0343NS-R3 Datasheet HTML 4Page - CT Micro International Corporation CTL0343NS-R3 Datasheet HTML 5Page - CT Micro International Corporation CTL0343NS-R3 Datasheet HTML 6Page - CT Micro International Corporation CTL0343NS-R3 Datasheet HTML 7Page - CT Micro International Corporation CTL0343NS-R3 Datasheet HTML 8Page - CT Micro International Corporation CTL0343NS-R3 Datasheet HTML 9Page - CT Micro International Corporation Next Button
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CT Micro
Rev 1
Proprietary & Confidential
Page 3
Nov, 2013
CTL0343NS-R3
N-Channel Enhancement MOSFET
Electrical Characteristics T
A = 25°C (unless otherwise specified)
Static Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
Max
Units
Notes
BVDSS
Drain-Source Breakdown Voltage
VGS= 0V, ID= -
250μA
30
-
-
V
IDSS
Drain-Source Leakage Current
VDS = 30V, VGS = 0V
-
-
1
µ A
IGSS
Gate-Source Leakage Current
VGS = ±12V, VDS = 0V
-
-
±100
nA
On Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
Max
Units
Notes
RDS(ON)
Drain-Source On-Resistance
VGS = 10V, ID = 3.4A
-
58
75
mΩ
3
VGS = 4.5V, ID = 2.7A
-
66
85
mΩ
VGS = 2.5V, ID = 1.0A
-
88
120
mΩ
VGS(th)
Gate-Source Threshold Voltage
VGS = VDS, I ID =-
250μA
0.6
1.0
1.4
V
3
Dynamic Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
Max
Units
Notes
CISS
Input Capacitance
VGS =0V,
VDS=-10V,
f=1MHz
f=1MHz
-
250
-
pF
COSS
Output Capacitance
VDS =10V
-
36
-
CRSS
Reverse Transfer Capacitance
f=1MHz
-
6
-
Switching Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
Max
Units
Notes
TD(ON)
Turn-On Delay Time
VDS = 10V ,
VGS = 4.5V,
RG =
6Ω,
RL= 10
Ω,
-
6.5
-
ns
TR
Rise Time
-
14
-
TD(OFF)
Turn-Off Delay Time
-
30
-
TF
Fall Time
-
2
-
QG
Total Gate Charge
VDS = -10V ,
-
4.7
-
nC
QGS
Gate-Source Charge
VGS = 4.5V,
-
1.9
-
QGD
Gate-Drain Charge
ID = 3.0A
-
1.4
-



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