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CTL0372PS-R3 数据表(PDF) 3 Page - CT Micro International Corporation

部件名 CTL0372PS-R3
功能描述  P-Channel Enhancement MOSFET
PDF  11 Pages
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制造商  CTMICRO [CT Micro International Corporation]
网页  http://www.ct-micro.com/
标志 CTMICRO - CT Micro International Corporation

CTL0372PS-R3 数据表(HTML) 3 Page - CT Micro International Corporation

  CTL0372PS-R3 Datasheet HTML 1Page - CT Micro International Corporation CTL0372PS-R3 Datasheet HTML 2Page - CT Micro International Corporation CTL0372PS-R3 Datasheet HTML 3Page - CT Micro International Corporation CTL0372PS-R3 Datasheet HTML 4Page - CT Micro International Corporation CTL0372PS-R3 Datasheet HTML 5Page - CT Micro International Corporation CTL0372PS-R3 Datasheet HTML 6Page - CT Micro International Corporation CTL0372PS-R3 Datasheet HTML 7Page - CT Micro International Corporation CTL0372PS-R3 Datasheet HTML 8Page - CT Micro International Corporation CTL0372PS-R3 Datasheet HTML 9Page - CT Micro International Corporation Next Button
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CT Micro
Rev 1
Proprietary & Confidential
Page 3
Jun, 2015
CTL0372PS-R3
P-Channel Enhancement MOSFET
Electrical Characteristics T
A = 25°C (unless otherwise specified)
Static Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
Max
Units
Notes
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID= - 250µA
-20
-
-
V
IDSS
Drain-Source Leakage Current
VDS = -20V, VGS = 0V
-
-
-1
µ A
IGSS
Gate-Source Leakage Current
VGS = ±12V, VDS = 0V
-
-
±100
nA
On Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
Max
Units
Notes
RDS(ON)
Drain-Source On-Resistance
VGS = -4.5V, ID = -3.2A
-
50
65
m
Ω
3
VGS = -2.5V, ID = -2.8A
-
67
85
m
Ω
VGS = -1.8V, ID = -2.3A
-
86
110
m
Ω
VGS(TH)
Gate-Source Threshold Voltage
VGS = VDS, ID = -250µA
-0.5
-
-1.5
V
3
Dynamic Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
Max
Units
Notes
CISS
Input Capacitance
VDS = - 15V ,
VGS = 0V,
f=1MHz
-
730
-
pF
COSS
Output Capacitance
-
86
-
CRSS
Reverse Transfer Capacitance
-
24
-
Switching Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
Max
Units
Notes
TD(ON)
Turn-On Delay Time
VDS = -10V , VGEN = - 4.5V,
RG = 6 ,
RL = 10
-
32
-
ns
TR
Rise Time
-
16
-
TD(OFF)
Turn-Off Delay Time
-
55
-
TF
Fall Time
-
4
QG
Total Gate Charge
VDS = -10V , VGS = -4.5V,
ID = -3.7A
-
12
-
nC
QGS
Gate-Source Charge
-
3.2
-
QGD
Gate-Drain (Miller) Charge
-
3
-



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