CTL0383NS-R3 datasheet(1/12 Pages) CTMICRO

部件名	CTL0383NS-R3

功能描述	N-Channel Enhancement MOSFET

PDF	12 Pages

Scroll/Zoom	100%

制造商	CTMICRO [CT Micro International Corporation]

网页	http://www.ct-micro.com/

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1 / 12 page

CT Micro

Rev 1

Proprietary & Confidential

Page 1

Nov, 2013

CTL0383NS-R3

N-Channel Enhancement MOSFET

Package Outline

Schematic

Features



Drain-Source Breakdown Voltage VDSS

30 V



Drain-Source On-Resistance

RDS(ON) 48m

, at V

GS

= 10V, ID= 3.4A

RDS(ON) 54m

, at V

GS

= 4.5V, ID= 2.7A

RDS(ON) 75m

, at V

GS

= 2.5V, ID= 1.0A



Continuous Drain Current at TC=25℃ ID = 3.8A



Advanced high cell density Trench Technology



RoHS Compliance & Halogen Free

Applications



Power Management



Lithium Ion Battery

Description

The CTL0383NS-R3 is the N-Channel logic enhancement

mode power field effect transistors are produced using

high cell density, DMOS trench technology. This high

density process is especially tailored to minimize on-state

resistance. These devices are particularly suited for low

voltage application such as cellular phone and notebook

computer power management and other battery powered

circuits where low in-line power loss are needed in a very

small outline surface mount package.

Gate

Source

Drain

Gate

Drain

Source

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