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CTL0402PS-R3 数据表(PDF) 3 Page - CT Micro International Corporation

部件名 CTL0402PS-R3
功能描述  P-Channel Enhancement MOSFET
PDF  11 Pages
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制造商  CTMICRO [CT Micro International Corporation]
网页  http://www.ct-micro.com/
标志 CTMICRO - CT Micro International Corporation

CTL0402PS-R3 数据表(HTML) 3 Page - CT Micro International Corporation

  CTL0402PS-R3 Datasheet HTML 1Page - CT Micro International Corporation CTL0402PS-R3 Datasheet HTML 2Page - CT Micro International Corporation CTL0402PS-R3 Datasheet HTML 3Page - CT Micro International Corporation CTL0402PS-R3 Datasheet HTML 4Page - CT Micro International Corporation CTL0402PS-R3 Datasheet HTML 5Page - CT Micro International Corporation CTL0402PS-R3 Datasheet HTML 6Page - CT Micro International Corporation CTL0402PS-R3 Datasheet HTML 7Page - CT Micro International Corporation CTL0402PS-R3 Datasheet HTML 8Page - CT Micro International Corporation CTL0402PS-R3 Datasheet HTML 9Page - CT Micro International Corporation Next Button
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CT Micro
Rev 1
Proprietary & Confidential
Page 3
Nov, 2013
CTL0402PS-R3
P-Channel Enhancement MOSFET
Electrical Characteristics T
A = 25°C (unless otherwise specified)
Static Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
Max
Units
Notes
BVDSS
Drain-Source Breakdown Voltage
VGS= 0V, ID= -
250μA
-20
-
-
V
IDSS
Drain-Source Leakage Current
VDS = -20V, VGS = 0V
-
-
-1
µ A
IGSS
Gate-Source Leakage Current
VGS = ±8V, VDS = 0V
-
-
±100
nA
On Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
Max
Units
Notes
RDS(ON)
Drain-Source On-Resistance
VGS = -10V, ID = -4.2A
-
52
62
mΩ
3
VGS = -4.5V, ID = -3.4A
-
60
72
mΩ
VGS = -2.5V, ID = -2.5A
70
91
mΩ
VGS = -1.8V, ID = -1.7A
-
90
120
mΩ
VGS(th)
Gate-Source Threshold Voltage
VGS = VDS, I ID =-
250μA
-0.4
---
-1.0
V
3
Dynamic Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
Max
Units
Notes
CISS
Input Capacitance
VGS =0V,
VDS=-10V,
f=1MHz
f=1MHz
-
745
-
pF
COSS
Output Capacitance
VDS =-15V
-
65
-
CRSS
Reverse Transfer Capacitance
f=1MHz
-
21
-
Switching Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
Max
Units
Notes
TD(ON)
Turn-On Delay Time
VDS = -15V ,
VGS = -10V,
RG =
6Ω,
RL= 15
Ω,
-
32
-
ns
TR
Rise Time
-
18
-
TD(OFF)
Turn-Off Delay Time
-
57
-
TF
Fall Time
-
4.5
-
QG
Total Gate Charge
VDS = -15V ,
-
10
-
nC
QGS
Gate-Source Charge
VGS = -4.5V,
-
2.8
-
QGD
Gate-Drain Charge
ID = -4.2A
-
2.5
-



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