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CTL0472PS-R3 数据表(PDF) 1 Page - CT Micro International Corporation |
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CTL0472PS-R3 数据表(HTML) 1 Page - CT Micro International Corporation |
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1 / 11 page ![]() CT Micro Rev 2 Proprietary & Confidential Page 1 Jun, 2015 CTL0472PS-R3 P-Channel Enhancement MOSFET Package Outline Schematic Features •••• Drain-Source Breakdown Voltage VDSS -20 V •••• Drain-Source On-Resistance RDS(ON) 58m Ω, at VGS= -4.5V, ID= -4.7A RDS(ON) 73m Ω, at VGS= -2.5V, ID= -1.0A •••• Continuous Drain Current at TA=25 ℃ID = -4.7A •••• Advanced high cell density Trench Technology •••• RoHS Compliance & Halogen Free Applications •••• Power Management •••• Portable Equipment •••• Battery Powered System •••• Load Switch Description The CTL0472PS-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications Gate Source Drain Gate Drain Source |
类似零件编号 - CTL0472PS-R3 |
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类似说明 - CTL0472PS-R3 |
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