CTL0502NS-R3 datasheet(3/11 Pages) CTMICRO

3 / 11 page

CT Micro

Rev 3

Proprietary & Confidential

Page 3

Jun, 2015

CTL0502NS-R3

N-Channel Enhancement MOSFET

Electrical Characteristics T

A = 25°C (unless otherwise specified)

Static Characteristics

Symbol

Parameters

Test Conditions

Min

Typ

Max

Units

Notes

BVDSS

Drain-Source Breakdown Voltage

VGS= 0V, ID= 250µA

IDSS

Drain-Source Leakage Current

VDS = 20V, VGS = 0V

µ A

IGSS

Gate-Source Leakage Current

VGS = ±12V, VDS = 0V

±100

On Characteristics

Symbol

Parameters

Test Conditions

Min

Typ

Max

Units

Notes

RDS(ON)

Drain-Source On-Resistance

VGS = 4.5V, ID = 3.0A

VGS = 2.5V, ID = 2.6A

VGS = 1.8V, ID = 1.0A

VGS(th)

Gate-Source Threshold Voltage

VGS = VDS, I ID =250µA

0.4

---

1.4

Dynamic Characteristics

Symbol

Parameters

Test Conditions

Min

Typ

Max

Units

Notes

CISS

Input Capacitance

VGS =0V,

668

COSS

Output Capacitance

VDS =10V

118

CRSS

Reverse Transfer Capacitance

f=1MHz

Switching Characteristics

Symbol

Parameters

Test Conditions

Min

Typ

Max

Units

Notes

TD(ON)

Turn-On Delay Time

VDS = 5V ,

VGS = 4.5V,

RG = 6 ,

ID =3.6A

10.5

Rise Time

TD(OFF)

Turn-Off Delay Time

29.5

Fall Time

4.5

Total Gate Charge

VDS = 10V ,

7.0

QGS

Gate-Source Charge

VGS = 4.5V,

1.0

QGD

Gate-Drain Charge

ID = 3.6A

1.5

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