CTLM13PS05-R3 datasheet(3/11 Pages) CTMICRO

3 / 11 page

CT Micro

Rev 1

Proprietary & Confidential

Page 3

Jun, 2015

CTLM13PS05-R3

P-Channel Enhancement MOSFET

Electrical Characteristics T

A = 25°C (unless otherwise specified)

Static Characteristics

Symbol

Parameters

Test Conditions

Min

Typ

Max

Units

Notes

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID= -250µA

-50

IDSS

Drain-Source Leakage Current

VDS = -50V, VGS = 0V

-1

µ A

IGSS

Gate-Source Leakage Current

VGS = ±20V, VDS = 0V

±100

On Characteristics

Symbol

Parameters

Test Conditions

Min

Typ

Max

Units

Notes

RDS(ON)

Drain-Source On-Resistance

VGS = -5V, ID = -100mA

Ω

Fig 4

VGS(TH)

Gate-Source Threshold Voltage

VGS = VDS, ID = -250µA

-0.8

-2.0

Fig 5

Dynamic Characteristics

Symbol

Parameters

Test Conditions

Min

Typ

Max

Units

Notes

CISS

Input Capacitance

VDS = -5V ,

VGS = 0V,

f=1MHz

Fig 3

COSS

Output Capacitance

CRSS

Reverse Transfer Capacitance

Switching Characteristics

Symbol

Parameters

Test Conditions

Min

Typ

Max

Units

Notes

TD(ON)

Turn-On Delay Time

VDS = -15V , RL = 50

ID = -2.5A

2.5

Fig

11 & 12

Rise Time

1.0

TD(OFF)

Turn-Off Delay Time

Fall Time

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