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BUX348 数据表(PDF) 2 Page - STMicroelectronics

部件名 BUX348
功能描述  FAST-SWITCHING POWER TRANSISTOR
PDF  4 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

BUX348 数据表(HTML) 2 Page - STMicroelectronics

  BUX348 Datasheet HTML 1Page - STMicroelectronics BUX348 Datasheet HTML 2Page - STMicroelectronics BUX348 Datasheet HTML 3Page - STMicroelectronics BUX348 Datasheet HTML 4Page - STMicroelectronics  
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THERMAL DATA
Rthj-case
Thermal Resistance Junction-case
Max
0.58
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICER
Collector Cut-off
Current (RBE = 10
Ω)
VCE = VCEV
VCE = VCEV
Tc = 100
oC
0.4
2
mA
mA
ICEV
Collector Cut-off
Current
(VBE = -1.5V)
VCE = VCEV
VCE = VCEV
Tc = 100
oC
0.4
2
mA
mA
IEBO
Emitter Cut-off
Current (IC = 0)
VEB = 5 V
2
mA
VCEO(sus)
∗ Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 0.2 A
L = 25 mH
450
V
VEBO
Emitter-Base Voltage
(IC = 0)
IE = 100 mA
7
V
VCE(sat)
∗ Collector-Emitter
Saturation Voltage
IC = 30 A
IB = 6 A
IC = 30 A
IB = 6 A
Tj = 100
oC
0.7
1.35
0.9
2
V
V
VBE(sat)
∗ Base-Emitter
Saturation Voltage
IC = 30 A
IB = 6 A
IC = 30 A
IB = 6 A
Tj = 100
oC
1.12
1.1
1.5
1.5
V
V
diC/dt
Rated of Rise on-state
Collector Current
VCC = 300V IB1 = 9 A
RC = 0
tp = 3
µs
Tj = 100
oC
125
250
A/
µs
VCE(3µs)∗
Collector-Emitter
Dynamic Voltage
VCC = 300V
IB1 = 9 A
RC = 10
Ω
Tj = 100
oC
4.4
8
V
VCE(5µs)∗
Collector-Emitter
Dynamic Voltage
VCC = 300V
IB1 = 9 A
RC = 10
Ω
Tj = 100
oC
2.3
4
V
INDUCTIVE LOAD
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ts
tf
tc
Storage Time
Fall Time
Crossover Time
VCC = 50 V
VClamp = 450 V
IC = 30 A
IB1 = 6 A
VBB = -5 V
LC = 80
µH
RBB = 0.4
Ω
Tj = 100
oC
2.75
0.12
0.44
4.5
0.4
0.7
µs
µs
µs
VCEW
Maximum Collector
Emitter Voltage
without Snubber
VCC = 50 V
ICWoff = 45 A
VBB = -5 V
IB1 = 6 A
LC = 55
µH
RBB = 0.4
Ω
Tj = 125
oC
450
V
* Pulsed : Pulse duration = 300 ms, duty cycle = 2%
BUX348
2/4



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