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CLC522AMC 数据表(PDF) 2 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
部件名 CLC522AMC
功能描述  Wideband Variable-Gain Amplifier
PDF  8 Pages
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制造商  NSC [National Semiconductor (TI)]
网页  http://www.national.com
标志 NSC - National Semiconductor (TI)

CLC522AMC 数据表(HTML) 2 Page - National Semiconductor (TI)

  CLC522AMC Datasheet HTML 1Page - National Semiconductor (TI) CLC522AMC Datasheet HTML 2Page - National Semiconductor (TI) CLC522AMC Datasheet HTML 3Page - National Semiconductor (TI) CLC522AMC Datasheet HTML 4Page - National Semiconductor (TI) CLC522AMC Datasheet HTML 5Page - National Semiconductor (TI) CLC522AMC Datasheet HTML 6Page - National Semiconductor (TI) CLC522AMC Datasheet HTML 7Page - National Semiconductor (TI) CLC522AMC Datasheet HTML 8Page - National Semiconductor (TI)  
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CLC522 Electrical Characteristics (V
CC = ±5V; AVmax = +10; Rf =1k
Ω; R
g =182W; RL = 100
Ω; V
g=+1.1V)
Ordering Information
supply voltage
±7V
short circuit current
80mA
common-mode input voltage
±V
cc
maximum junction temperature
+150°C
storage temperature
-65°C to+150°C
lead temperature (soldering 10 sec)
+300°C
transistor count
74
Absolute Maximum Ratings
Notes
1) AJE (SOIC) is tested/guaranteed with Rf=866Ω and Rg= 165Ω.
2) J-level, spec is 100% tested at +25°C.
3) Specified with Vin = 0.2V and Vg < 0.5Vpp.
4) Feedtrough is specified at max. attenuation (i.e Vg =-1.1V)
http://www.national.com
2
Model
Temperature Range
Description
CLC522AJP
-40°C to +85°C
14-pin PDIP
CLC522AJE
-40°C to +85°C
14-pin SOIC
CLC522ALC
-40°C to +85°C
dice
CLC522AMC
-55°C to +125°C
dice, MIL-STD-883
PARAMETERS
CONDITIONS
TYP
MIN/MAX RATINGS
UNITS
NOTES
Ambient Temperature
AJ
+25
+25
0 to +70
-40 to +85
°C
1
FREQUENCY DOMAIN RESPONSE
-3dB bandwidth
Vout < 0.5Vpp
165
120
115
110
MHz
V
out < 5.0Vpp
150
100
95
90
MHz
gain control bandwidth
V
out < 0.5Vpp
165
120
115
110
MHz
3
gain flatness
Vout < 0.5Vpp
peaking
DC to 30MHz
0
0.1
0.1
0.1
dB
rolloff
DC to 30MHz
0.05
0.25
0.25
0.4
dB
linear phase deviation
DC to 60MHz
0.3
1.0
1.1
1.2
°
feedthrough
30MHz
- 62
- 57
- 57
-57
dB
4
TIME DOMAIN RESPONSE
rise and fall time
0.5V step
2.2
2.9
3.0
3.2
ns
5.0V step
3.0
5.0
5.0
5.0
ns
settling time
2.0V step to 0.1%
12
18
18
18
ns
overshoot
0.5V step
2
15
15
15
%
slew rate
4.0V step
2000
1400
1400
1400
V/
µs
DISTORTION AND NOISE RESPONSE
2nd harmonic distortion
2Vpp, 20MHz
- 50
- 44
- 44
-44
dBc
3rd harmonic distortion
2V
pp, 20MHz
- 65
- 58
- 56
-54
dBc
equivalent input noise
1 to 200MHz
5.8
6.2
6.5
6.8
nV/
√Hz
noise floor
1 to 200MHz
- 152
- 150
- 149
- 149
dBm1Hz
GAIN ACCURACY
signal channel nonlinearity (SGNL)V
out = ±2Vpp
0.04
0.1
0.1
0.1
%
2
gain control nonlinearity (GCNL)
full range
0.5
2.0
2.2
3.0
%
2
gain error (GACCU)AVmax=+10
± 0.0
± 0.5
± 0.5
± 1.0
dB
2
Vg high
+ 990
+ 990±60
+ 990±60
+ 990±60
mV
low
- 975
- 975±80
- 975±80
- 975±80
mV
STATIC DC PERFORMANCE
Vin
voltage range
common mode
± 2.2
± 1.2
± 1.2
± 1.4
V
bias current
9
21
26
45
µA2
average drift
65
---
175
275
nA/°C
offset current
0.2
2.0
3.0
4.0
µA
average drift
5
---
30
40
nA/°C
resistance
1500
650
450
175
k
capacitance
1.0
2.0
2.0
2.0
pF
Vg
bias current
15
38
47
82
µA
average drift
125
---
300
600
nA/°C
resistance
100
38
30
15
k
capacitance
1.0
2.0
2.0
2.0
pF
output voltage range
RL=
± 4.0
± 3.7
± 3.6
± 3.5
V
current
± 70
± 47
± 40
± 25
mA
offset voltage
AVmax=+10
25
85
95
120
mV
2
average drift
100
---
350
400
µV/°C
resistance
0.1
0.2
0.3
0.6
IRgmax
1.8
1.37
1.26
1.15
mA
power supply sensitivity
output referred
10
40
40
40
mV/V
common-mode rejection ratio
input referred
70
59
59
59
dB
supply current
R
L=
46
61
62
63
mA
2
Min/max ratings are based on product characterization and simulation. Individual parameters are tested as noted. Outgoing quality levels are
determined from tested parameters.
Package Thermal Resistance
Package
θ
JC
θ
JA
Plastic (AJP)
55°C/W
100°C/W
Surface Mount (AJE)
35°C/W
105°C/W
CerDIP
40°C/W
95°C/W



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