RTQ035P02

Transistor

2/4

Absolute maximum ratings

(Ta=25

°C)

Parameter

V

V

A

A

W

°C

A

A

°C

Tch

Tstg

Symbol

−20

±12

−1

−4

1.25

150

−55~+150

Limits

Unit

∗1 Pw 10µs, Duty cycle 1%

∗2 Mounted on a ceramic board

Drain

−source voltage

Gate

−source voltage

Drain current

Source current

(Body diode)

Total power dissipation

Channel temperature

Range of Storage temperature

Continuous

Pulsed

Continuous

Pulsed

∗1

∗1

∗2

±3.5

±17.5

<=

<=

Electrical characteristics

(Ta=25

°C)

Parameter

Symbol

Min.

−

−20

−

−0.7

−

−

3.5

−

−

−

−

−

−

50

1200

−

200

130

±10

−

−1

−2.0

65

−

55

70

−

−

−

−

µA

=

=

−1

=0V

=

=

=

=

=

f

=1MHz

V

µA

V

m

Ω

m

Ω

pF

S

pF

pF

−

16

−

=

−2A

−15V

ns

−

40

−

=

−4.5V

ns

−

55

−

=7.5

Ω

ns

−

30

−

=10

Ω

ns

Typ.

Max.

Unit

Conditions

Gate-source leakage

Gate threshold voltage

Foward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Turn-off delay time

Rise time

Fall time

Drain-source breakdown voltage

Static drain-source on-state

resistance

Zero gate voltage drain current

Total gate charge

Gate-source charge

Gate-drain charge

Forward voltage

Qg

Qgs

Qgd

VSD

m

Ω

−

V

nC

nC

nC

−1.2

−

−

−

−

−

−

−

80

10.5

2.0

3.5

−

100

mA,

mA

=

=

−15V

=

−4.5V

=

∗

∗

∗

∗

∗

∗

∗PULSED

=

−3.5A

Body diode characteristics (source-drain characteristics)