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AM29F002B 数据表(PDF) 40 Page - Advanced Micro Devices |
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AM29F002B 数据表(HTML) 40 Page - Advanced Micro Devices |
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40 / 40 page ![]() November 28, 2000 Am29F002B/Am29F002NB 39 REVISION SUMMARY Revision A (July 1998) Initial release. Revision B (January 1999) Distinctive Characteristics Added: ■ 20-year data retention at 125 °C — Reliable operation for the life of the system AC Characterisitics—Read Operations Table tEHQZ, tGHQZ: Changed the 55 speed option to 15 ns from 20 ns AC Characteristics—Erase/Program Operations tWLAX: Changed the 90 speed option to 45 ns from 50 ns. tDVWH: Changed the 55 speed option to 25 ns from 30 ns. tWLWH: changed the 55 speed option to 30 ns from 35 ns. AC Characteristics—Alternate CE# Controlled Erase/Program Operations tDVEH: Changed the 55 speed option to 25 ns from 30 ns. tELEH: Changed the 55 speed option to 30 ns from 35 ns. tELAX: Changed the 90 speed option to 45 ns from 50 ns. DC Characteristics—TTL/NMOS Compatible ICC1, ICC2, ICC3, ICC4: Added Note 2 “Maximum ICC specifications are tested with VCC = VCCmax”. DC Characteristics—CMOS Compatible ICC1, ICC2, ICC3, ICC4: Added Note 2 “Maximum ICC specifications are tested with VCC = VCCmax”. Revision C (November 12, 1999) AC Characteristics—Figure 11. Program Operations Timing and Figure 12. Chip/Sector Erase Operations Deleted tGHWL and changed OE# waveform to start at high. Physical Dimensions Replaced figures with more detailed illustrations. Revision D (November 28, 2000) Global Added table of contents. Ordering Information Deleted burn-in option. Table 5, Command Definitions In Note 4, changed the lower address bit of don’t care range to A11. Trademarks Copyright © 2000 Advanced Micro Devices, Inc. All rights reserved. AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc. ExpressFlash is a trademark of Advanced Micro Devices, Inc. Product names used in this publication are for identification purposes only and may be trademarks of their respective companies |
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