ACE2391M datasheet(2/6 Pages) ACE

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ACE2391M

N-Channel 150-V MOSFET

VER 1.1

Packaging Type

Ordering information

ACE2391M BM + H

Electrical Characteristics

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Static

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 uA

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ±20 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = 120 V, VGS = 0 V

VDS = 120V, VGS = 0 V, TJ = 55°C

On-State Drain Current

ID(on)

VDS = 5 V, VGS = 10 V

Drain-Source On-Resistance

rDS(on)

VGS = 10 V, ID = 1.1 A

0.7

VGS = 4.5 V, ID = 0.8 A

1.2

Forward Transconductance

gfs

VDS = 15 V, ID = 1.1 A

Diode Forward Voltage

VSD

IS = 0.8 A, VGS = 0 V

0.75

Dynamic

Total Gate Charge

VDS = 75 V, VGS = 4.5 V, ID = 1.1 A

3.5

Gate-Source Charge

Qgs

1.3

Gate-Drain Charge

Qgd

1.5

Turn-On Delay Time

td(on)

VDD = 75 V, RL = 75 Ω , ID = 1.1 A,

VGEN = 10 V, RGEN = 6 Ω

4.4

Rise Time

4.9

Turn-Off Delay Time

td(off)

18.4

Fall Time

4.9

Input Capacitance

Ciss

VDS = 15 V, VGS = 0 V, f =1 MHz

356

Output Capacitance

Coss

ReverseTransfer Capacitance

Crss

Note:

a. Pulse test: PW <= 300us duty cycle <= 2%.

b. Guaranteed by design, not subject to production testing.

BM : SOT-23-3

Pb - free

Halogen - free

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