ACE7332M datasheet(2/6 Pages) ACE

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ACE7332M

N-Channel 30-V (D-S) MOSFET

VER 1.1

Electrical Characteristics

Parameter

Symbol

Conditions

Min.

Typ.

Max

Unit

Static

Gate-Source Threshold

Voltage

VGS(th)

DS = VGS, ID = 250 uA

Gate-Body Leakage

IGSS

DS = 0 V, VGS = ± 20V

±100

Zero ate Voltage Drain

Current

IDSS

DS = 24 V, VGS = 0 V

DS = 24 V, VGS = 0 V,

J = 55°C

On-State Drain Current

ID(on)

DS = 5 V, VGS = 10 V

Drain-Source

On-Resistance

RDS(ON)

GS = 10 V, ID = 11 A

mΩ

GS = 4.5 V, ID =8.8A

Forward

Transconductance

gFS

DS =15 V, ID = 11 A

Diode Forward Voltage

VSD

S = 2.6A, VGS = 0 V

0.74

Dynamic

Total Gate Charge

DS = 15 V, VGS = 4.5 ID =11 A

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

DS = 15 V, RL = 1.4 Ω, ID = 11 A,

GEN

= 10 V, R

GEN

= 6 Ω

Rise Time

Turn-Off Delay Time

td(off)

100

Fall Time

Input Capacitance

Ciss

DS = 15 V, VGS = 0 V, f = 1 MHz

1456

Output Capacitance

Coss

231

Reverse Transfer

Capacitance

Crss

198

Note:

Pulse test: PW <= 300us duty cycle <= 2%.

Guaranteed by design, not subject to production testing

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