ACE7333M datasheet(2/6 Pages) ACE

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ACE7333M

P-Channel 30-V (D-S) MOSFET

VER 1.1

Packaging Type

Ordering information

DFN3*3-8L

ACE7333M NN + H

Electrical Characteristics

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Static

Gate Source Threshold Voltage

VGS(th)

VDS=VGS, ID=-250uA

Gate Body Leakage

IGSS

VDS=0V, VGS=±20V

±100

Zero Gate Voltage Drain Current

IDSS

VDS=-24V, VGS=0V

-1

VDS=-24V, VGS=0V, TJ=55℃

-25

On-State Drain-Current

ID(on)

VDS=-5V, VGS=-10V

-15

Static Drain-Source On-Resistance

rDS(ON)

VGS=-10V,ID=-8.7A

VGS=-4.5V,ID=-7A

Forward Transconductance

gfS

VDS=-15V,ID=-8.7A

Diode Forward Voltage

VSD

IS=-2.3A ,VGS=0V

-0.76

Dynamic

Total Gate Charge

VDS=-15V, VGS=-4.5V,

ID=-8.7A

Gate-Source Charge

Qgs

6.5

Gate-Drain Charge

Qgd

9.8

Turn-On Delay Time

td(on)

VDS=-15V, ,RL=1.8Ω

ID=-8.7A ,VGEN=-10V

RGEN=6Ω,

Rise Time

Turn-Off Delay Time

td(off)

Fall Time

Input Capacitance

Ciss

VDS=15V, VGS=0V

f=1MHz

1794

Output Capacitance

Coss

242

Reverse Transfer Capacitance

Crss

224

Note:

a. Pulse test: PW <= 300us duty cycle <= 2%.

b. Guaranteed by design, not subject to production testing

PN : DFN3*3-8L

Pb - free

Halogen - free

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