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DB805D 数据表(PDF) 2 Page - JILIN SINO-MICROELECTRONICS CO., LTD.

部件名 DB805D
功能描述  Compact fluorescent lamp (CFL) 220 V mains
PDF  5 Pages
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制造商  JSMC [JILIN SINO-MICROELECTRONICS CO., LTD.]
网页  http://www.hwdz.com.cn
标志 JSMC - JILIN SINO-MICROELECTRONICS CO., LTD.

DB805D 数据表(HTML) 2 Page - JILIN SINO-MICROELECTRONICS CO., LTD.

  DB805D Datasheet HTML 1Page - JILIN SINO-MICROELECTRONICS CO., LTD. DB805D Datasheet HTML 2Page - JILIN SINO-MICROELECTRONICS CO., LTD. DB805D Datasheet HTML 3Page - JILIN SINO-MICROELECTRONICS CO., LTD. DB805D Datasheet HTML 4Page - JILIN SINO-MICROELECTRONICS CO., LTD. DB805D Datasheet HTML 5Page - JILIN SINO-MICROELECTRONICS CO., LTD.  
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R
DB805D
201311A
2/5
ABSOLUTE RATINGS (Tc=25
)
Pulse Test: Pulse Width = 5.0 ms, Duty Cycle
< 10%.
ElECTRICAL CHARACTERISTIC
THERMAL CHARACTERISTIC
Parameter
Symbol
Value(min) Value(max)
Unit
Thermal Resistance Junction Ambient (single transistor)
Rth(j-c)
-
42
/W
℃
(
)
Thermal Resistance Junction Case (single transistor)
Rth(j-c)
-
2.7
/W
℃
Parameter
Symbol
Value
Unit
—
Collector- Emitter Voltage
VBE=0
VCES
700
V
—
Collector- Emitter Voltage
IB=0
VCEO
400
V
—
Emitter-Base Voltage
VEBO
9
V
Collector Current
DC
IC
4
A
Collector Current
pulse
ICP
8
A
Base Current
DC
IB
2
A
Base Current
pulse
IBP
4
A
Total Dissipation (
Tamb = 25 °C single transistor )
PTOT
3
W
Total Dissipation (
Tcase = 25 °C single transistor )
PTOT
45
W
Total Dissipation (TO-220C/262/263)
PC
75
W
Junction Temperature
Tj
150
Storage Temperature
Tstg
-55~+150
Parameter
Tests conditions
Value(min)
Value(typ)
Value(max)
Unit
V(BR)CEO
IC=10mA,IB=0
400
-
-
V
V(BR)CBO
IC=1mA,IB=0
700
-
-
V
V(BR)EBO
IE=1mA,IC=0
9
-
-
V
ICBO
VCB=700V, IE=0
-
-
100
µA
ICEO
VCE=400V,IB=0
-
-
50
µA
IEBO
VEB=9V, IC=0
-
-
10
µA
Hfe(1)
VCE =10V,
IC=500mA
20
-
30
Hfe(2)
VCE =5V,
IC=2A
5
-
-
VCE(sat)
IC=2A,
IB=0.4A
-
-
1.0
V
VBE(sat)
IC=2A,
IB=0.5A
-
-
1.8
V
tf
-
-
0.7
µS
ts
VCC=24V
IC=2A,IB1=-IB2=0.4A
-
-
5
µS
fT
VCE=10V, IC=0.5A
4
-
-
MHz



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