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HTB50-TP 数据表(PDF) 1 Page - LEM

部件名 HTB50-TP
功能描述  Current Transducer
PDF  3 Pages
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制造商  LEM [LEM]
网页  http://www.lem.co.jp/HQ/en
标志 LEM - LEM

HTB50-TP 数据表(HTML) 1 Page - LEM

  HTB50-TP Datasheet HTML 1Page - LEM HTB50-TP Datasheet HTML 2Page - LEM HTB50-TP Datasheet HTML 3Page - LEM  
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120425/12
LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice.
www.lem.com
Page 1/3
I
PN = 50 .. 400 A
Features
● Hall effect measuring principle
● Galvanic isolation between
primary and secondary circuit
● Isolation voltage 2500 V
● Low power consumption
● Wide power supply: ± 12 ..15 V
● Primary bus bar option for 50
A and 100 A version for ease of
connection
Advantages
● Small size and space saving
● Only one design for wide current
ratings range
● High immunity to external
interference.
Applications
● AC variable speed drives
● Static converters for DC motor
drives
● Battery supplied applications
● Uninterruptible Power Supplies
(UPS)
● Switched Mode Power Supplies
(SMPS)
● Power supplies for welding
applications
Application domain
● Industrial
Current Transducer HTB 50 .. 400 - P
and HTB 50 .. 100 - TP
For the electronic measurement of currents: DC, AC, pulsed...,
with a galvanic isolation between the primary circuit (high power) and
the secondary circuit (electronic circuit).
Electrical data
Primary nominal
Primary current
Type
current rms
measuring range
I
PN (A)
I
PM (A)
± 50
± 150
HTB 50-P, HTB 50-TP1)
± 100
± 300
HTB 100-P, HTB 100-TP1)
± 150
± 450
HTB 150-P
± 200
± 500
HTB 200-P
± 300
± 600
HTB 300-P
± 400
± 600
HTB 400-P
V
C
Supply voltage (± 5 %) 2)
± 12 ..15
V
I
C
Current consumption
± 15
mA
V
d
Rms voltage for AC isolation test, 50 Hz, 1 min
2.5
kV
R
IS
Isolation resistance @ 500 VDC
> 500
MW
V
OUT
Output voltage (Analog)@ ±
I
PN, RL = 10kW, TA = 25°C
± 4
V
R
OUT
Output internal resistance
100
W
R
L
Load resistance
> 10
kW
Accuracy - Dynamic performance data
X
Accuracy @
I
PN, TA = 25°C (excluding offset)
< ± 1
% of
I
PN
e
L
Linearity error (0 .. ±
I
PN)
< ± 1
% of
I
PN
V
OE
Electrical offset voltage @
T
A = 25°C
< ± 30
mV
V
OH
Hysteresis offset voltage @
I
P = 0;
after an excursion of 1 x
I
PN
< ± 1
% of
I
PN
TCV
OE Temperature coefficient of VOE HTB 50-(T)P
< ± 2.0
mV/K
HTB 100-(T)P .. 400-P
< ± 1.0
mV/K
TCV
OUT Temperature coefficient of VOUT (% of reading)
< ± 0.1
%/K
t
r
Response time to 90% of
I
PN step
< 3
µs
BW
Frequency bandwidth (- 3 dB) 3)
DC .. 50
kHz
General data
T
A
Ambient operating temperature
- 40 .. + 80
°C
T
S
Ambient storage temperature
- 40 .. + 85
°C
m
Mass
< 30 ( < 36)
g
Standards
EN 50178 :
1997
2 pins of Ø2mm diameter are available on transducer
for PCB soldering
Notes : 1) -TP version is equipped with a primary bus bar.
2)
Operating at ±12V ≤ Vc < ±15V will reduce the measuring range.
3)
Derating is needed to avoid excessive core heating at high frequency.


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