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数据搜索系统，热门电子元器件搜索 |
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IRF7101 数据表(PDF) 1 Page - International Rectifier |
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IRF7101 数据表(HTML) 1 Page - International Rectifier |
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1 / 10 page  www.irf.com 1 1/14/04 IRF7832 HEXFET® Power MOSFET Notes through are on page 10 Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems Top View 8 1 2 3 4 5 6 7 D D D D G S A S S A SO-8 VDSS RDS(on) max Qg 30V 4.0m :@V GS = 10V 34nC Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V A IDM Pulsed Drain Current c PD @TA = 25°C Power Dissipation W PD @TA = 70°C Power Dissipation Linear Derating Factor W/°C TJ Operating Junction and °C TSTG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units RθJL Junction-to-Drain Lead ––– 20 °C/W RθJA Junction-to-Ambient f ––– 50 -55 to + 155 2.5 0.02 1.6 Max. 20 16 160 ± 20 30 PD - 94594D |
类似零件编号 - IRF7101 |
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类似说明 - IRF7101 |
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